Po-Hao Wu

Po-Hao is a dedicated Materials Engineer with a strong background in both research and industry. He holds a Master’s degree in Material Science and Engineering from the University of Illinois Urbana-Champaign and a Bachelor’s degree in Materials Engineering from National Yang Ming Chiao Tung University. With a passion for material science and engineering, Po-Hao is committed to applying his knowledge and skills to tackle real-world challenges.

Previously, as an R&D Advanced Tool and Module Process Engineer Intern at TSMC, Po-Hao utilized his expertise in material science to analyze the etching effects on OVL behavior and simulate the etching process. He applied mathematical models to evaluate the effectiveness of E2L correction values in mitigating HER decrease and investigated the impact of dry etching ion bombardment on HER and wafer edge deterioration. His work also involved developing and sustaining advanced module processes, while assisting in the transfer of these processes and tools to volume manufacturing.

In addition to his industry experience, Po-Hao conducted research under the mentorship of Prof. Kung-Hwa Wei, focusing on the integration of transition metal dichalcogenides (TMDs) with 2D materials. His work involved employing plasma-induced electrochemical processes to exfoliate materials such as graphene and molybdenum disulfide, as well as analyzing the hydrogen evolution reaction (HER) catalytic activity of various materials through techniques like linear sweep voltammetry and electrochemical impedance spectroscopy.

With a proven track record of both independent research and practical industry experience, Po-Hao is now seeking full-time opportunities in materials engineering or related fields where he can continue to apply his skills, contribute to innovative advancements, and make a significant impact.

During my internship at TSMC, I worked on via-on-metal gate (VG) optimization within the advanced middle-end etching module (2nm process node) and assisted in transferring core process workflows to HVM with Vendor’s Process Engineer Team. My focus was on analyzing the impact of etching effects on overlay (OVL) behavior, using TEM & CD-SEM data to inspect VG LCDU and performance. 

To address these challenges, I developed Python-based model with randomized algorithm to simulate etching behavior, incorporating etch-to-lithography (E2L) correction & visualizing position accuracy related to OVL deviations. We investigated dry etching ion bombardment on the hot edge ring (HER) and examined the relationship between operating RF hours and edge deterioration to assess E2L correction effectiveness in compensating HER reduction. By validating our simulation model, we successfully optimized VG etching performance and minimized defects, contributing to improved process stability and manufacturability. 

During my independent study, I focused on developing MoS2/graphene nanocomposite materials using a one-step surface plasma-induced electrochemical exfoliation method. This research aimed to optimize the material’s catalytic properties for hydrogen evolution reactions (HER), a key process in hydrogen production for fuel cells. By varying applied voltages, I analyzed the composite’s morphology and electrochemical performance, identifying optimal conditions for improved catalytic efficiency. Proficient in advanced semiconductor fabrication tools, including the Heidelberg MLA150 aligner for maskless photolithography and the LDS 18-7211 Thermal Evaporator and Temescal Ebeam evaporator for thin film deposition. Additionally, I have been experimenting with SEM, XRD, and spectroscopy techniques for materials characterization. This hands-on experience has strengthened my ability to bridge theoretical knowledge with practical applications in semiconductor manufacturing.