Director of MOCVD GaN Engineering - Sunnyvale, CA, United States - Avicena Tech

Description

Role:

• Manage the MOCVD GaN epitaxy/characterization group within the R&D organization.
• Provide very close collaboration with R&D LED Wafer Fab Process Engineering team.
• Device characterization, design of experiments, epitaxy design.
• Apply technical leadership and domain expertise in Gallium Nitride (GaN).
• Define strategies and technology applications.
• Leverage cross-functional collaboration across the areas of semiconductor process development, modeling, simulation, and characterization.

Requirements:

• MS or PhD in Materials Science and Engineering, Electrical Engineering, or Applied Physics.
• 10+ years of relevant industry experience.
• Very strong understanding of semiconductor device physics.
• Very strong understanding of characterization techniques (SIMS, XRD, SEM, TEM, etc.).
• Good theoretical knowledge of light extraction techniques.
• Comfortable in or about an R&D clean room environment.
• Strong familiarity with semiconductor wafer fabrication processes (photolithography, thin film metal deposition, dielectrics, wet/dry etching, etc.)
• Excellent interpersonal skills, working with or managing peers, engineers, and technicians.
• Ability to present and communicate complex scientific findings and drive equally complex engineering solutions.
• Ability to overcome unforeseen challenges in a dynamic work environment with shifting timelines.